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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH715AF DESCRIPTION *With TO-3PFa package *High voltage,high speed APPLICATIONS *Horizontal deflection for monitors. *Switching mode power supplies PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 10 10 20 5 10 57 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ;IB=0 IE=10mA ;IC=0 IC=7A ;IB=1.5A IC=7A ;IB=1.5A VCE=1500V; VBE=0 Tj=125 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V 10 8 MIN 700 10 BUH715AF SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 TYP. MAX UNIT V V 1.5 1.3 1 2 100 V V mA A 16 Switching times ts tf Storage time IC=7A;IB1=1.5A;IB2=3.5A; VCC=400V Fall time 140 210 ns 2.1 3.1 s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH715AF Fig.2 Outline dimensions(unindicated tolerance:0.30mm) 3 |
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